Fiori, G. et al. Electronics based on two-dimensional materials. Nat. Nanotechnol. 9, 768–779 (2014).
Chhowalla, M., Jena, D. & Zhang, H. Two-dimensional semiconductors for transistors. Nat. Rev. Mater. 1, 16052 (2016).
Akinwande, D. et al. Graphene and two-dimensional materials for silicon technology. Nature 573, 507–518 (2019).
Kang, K. et al. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Nature 520, 656–660 (2015).
Manzeli, S., Ovchinnikov, D., Pasquier, D., Yazyev, O. V. & Kis, A. 2D transition metal dichalcogenides. Nat. Rev. Mater. 2, 17033 (2017).
Hoang, A. T. et al. Low-temperature growth of MoS2 on polymer and thin glass substrates for flexible electronics. Nat. Nanotechnol. 18, 1439–1447 (2023).
Bhimanapati, G. R. et al. Recent advances in two-dimensional materials beyond graphene. ACS Nano 9, 11509–11539 (2015).
Zhou, J. et al. A library of atomically thin metal chalcogenides. Nature 556, 355–359 (2018).
Liu, L. et al. Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire. Nature 605, 69–75 (2022).
Kim, K. S. et al. Non-epitaxial single-crystal 2D material growth by geometric confinement. Nature 614, 88–94 (2023).
Zhou, Z. et al. Stack growth of wafer-scale van der Waals superconductor heterostructures. Nature 621, 499–505 (2023).
Jayachandran, D. et al. Three-dimensional integration of two-dimensional field-effect transistors. Nature 625, 276–281 (2024).
Zhan, Y., Liu, Z., Najmaei, S., Ajayan, P. M. & Lou, J. Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate. Small 8, 966–971 (2012).
Najmaei, S. et al. Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers. Nat. Mater. 12, 754–759 (2013).
van der Zande, A. M. et al. Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. Nat. Mater. 12, 554–561 (2013).
Wang, X., Feng, H., Wu, Y. & Jiao, L. Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition. J. Am. Chem. Soc. 135, 5304–5307 (2013).
Liu, Z. et al. Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition. Nat. Commun. 5, 5246 (2014).
Wang, Q. et al. Wafer-scale highly oriented monolayer MoS2 with large domain sizes. Nano Lett. 20, 7193–7199 (2020).
Chubarov, M. et al. Wafer-scale epitaxial growth of unidirectional WS2 monolayers on sapphire. ACS Nano 15, 2532–2541 (2021).
Li, T. et al. Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire. Nat. Nanotechnol. 16, 1201–1207 (2021).
Zheng, P. et al. Universal epitaxy of non-centrosymmetric two-dimensional single-crystal metal dichalcogenides. Nat. Commun. 14, 592 (2023).
Zhu, H. et al. Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire. Nat. Nanotechnol. 18, 1295–1302 (2023).
Fu, J.-H. et al. Oriented lateral growth of two-dimensional materials on c-plane sapphire. Nat. Nanotechnol. 18, 1289–1294 (2023).
Jung, Y. et al. Nucleation and growth of monolayer MoS2 at multisteps of MoO2 crystals by sulfurization. ACS Nano 17, 7865–7871 (2023).
Lee, C. et al. Anomalous lattice vibrations of single- and few-layer MoS2. ACS Nano 4, 2695–2700 (2010).
Zandiatashbar, A. et al. Effect of defects on the intrinsic strength and stiffness of graphene. Nat. Commun. 5, 3186 (2014).
Lee, G., Yang, G., Cho, A., Han, J. W. & Kim, J. Defect-engineered graphene chemical sensors with ultrahigh sensitivity. Phys. Chem. Chem. Phys. 18, 14198–14204 (2016).
Karvonen, L. et al. Rapid visualization of grain boundaries in monolayer MoS2 by multiphoton microscopy. Nat. Commun. 8, 15714 (2017).
Li, L. et al. Epitaxy of wafer-scale single-crystal MoS2 monolayer via buffer layer control. Nat. Commun. 15, 1825 (2024).
Alexeev, E. M. et al. Imaging of interlayer coupling in van der Waals heterostructures using a bright-field optical microscope. Nano Lett. 17, 5342–5349 (2017).
Ly, T. H. et al. Observing grain boundaries in CVD-grown monolayer transition metal dichalcogenides. ACS Nano 8, 11401–11408 (2014).
Wang, J. et al. Visualizing grain boundaries in monolayer MoSe2 using mild H2O vapor etching. Nano Res. 11, 4082–4089 (2018).
Zhang, Y. et al. Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging Its grain boundary. ACS Nano 7, 8963–8971 (2013).
Zhang, Y. et al. Invisible growth of microstructural defects in graphene chemical vapor deposition on copper foil. Carbon 96, 237–242 (2016).
Li, J. et al. Facile and rigorous route to distinguish the boundary structure of monolayer MoS2 domains by oxygen etching. Appl. Surf. Sci. 510, 145412 (2020).
Li, J. et al. Single-crystal MoS2 monolayer wafer grown on Au (111) film substrates. Small 17, 2100743 (2021).
Cahill, D. G. Analysis of heat flow in layered structures for time-domain thermoreflectance. Rev. Sci. Instrum. 75, 5119–5122 (2004).
Sood, A. et al. Quasi-ballistic thermal transport across MoS2 thin films. Nano Lett. 19, 2434–2442 (2019).
Yu, Y., Minhaj, T., Huang, L., Yu, Y. & Cao, L. In-plane and interfacial thermal conduction of two-dimensional transition-metal dichalcogenides. Phys. Rev. Appl. 13, 034059 (2020).
Yalon, E. et al. Temperature-dependent thermal boundary conductance of monolayer MoS2 by Raman thermometry. ACS Appl. Mater. Interfaces 9, 43013–43020 (2017).
Feser, J. P., Liu, J. & Cahill, D. G. Pump-probe measurements of the thermal conductivity tensor for materials lacking in-plane symmetry. Rev. Sci. Instrum. 85, 104903 (2014).
Feser, J. P. & Cahill, D. G. Probing anisotropic heat transport using time-domain thermoreflectance with offset laser spots. Rev. Sci. Instrum. 83, 104901 (2012).
Sledzinska, M. et al. Thermal conductivity of MoS2 polycrystalline nanomembranes. 2D Mater. 3, 035016 (2016).
Gu, X. & Yang, R. Phonon transport in single-layer transition metal dichalcogenides: a first-principles study. Appl. Phys. Lett. 105, 131903 (2014).
Jiang, P., Qian, X., Gu, X. & Yang, R. Probing anisotropic thermal conductivity of transition metal dichalcogenides MX2 (M = Mo, W and X = S, Se) using time-domain thermoreflectance. Adv. Mater. 29, 1701068 (2017).
Liu, J., Choi, G.-M. & Cahill, D. G. Measurement of the anisotropic thermal conductivity of molybdenum disulfide by the time-resolved magneto-optic Kerr effect. J. Appl. Phys. 116, 233107 (2014).
Jiang, P., Qian, X. & Yang, R. Tutorial: time-domain thermoreflectance (TDTR) for thermal property characterization of bulk and thin film materials. J. Appl. Phys. 124, 161103 (2018).
Yang, J., Ziade, E. & Schmidt, A. J. Uncertainty analysis of thermoreflectance measurements. Rev. Sci. Instrum. 87, 014901 (2016).
Lindroth, D. O. & Erhart, P. Thermal transport in van der Waals solids from first-principles calculations. Phys. Rev. B 94, 115205 (2016).
Cui, X. et al. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. Nat. Nanotechnol. 10, 534–540 (2015).
Smithe, K. K. H., English, C. D., Suryavanshi, S. V. & Pop, E. High-field transport and velocity saturation in synthetic monolayer MoS2. Nano Lett. 18, 4516–4522 (2018).
Sanne, A. et al. Radio frequency transistors and circuits based on CVD MoS2. Nano Lett. 15, 5039–5045 (2015).
Amani, M., Burke, R. A., Proie, R. M. & Dubey, M. Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene. Nanotechnology 26, 115202 (2015).
Xiao, J. et al. Record-high saturation current in end-bond contacted monolayer MoS2 transistors. Nano Res. 15, 475–481 (2022).
Jeon, J. et al. Layer-controlled CVD growth of large-area two-dimensional MoS2 films. Nanoscale 7, 1688–1695 (2015).
Smithe, K. K. H., Suryavanshi, S. V., Muñoz Rojo, M., Tedjarati, A. D. & Pop, E. Low variability in synthetic monolayer MoS2 devices. ACS Nano 11, 8456–8463 (2017).
Park, W. et al. Photoelectron spectroscopic imaging and device applications of large-area patternable single-Layer MoS2 synthesized by chemical vapor deposition. ACS Nano 8, 4961–4968 (2014).
Shen, P.-C. et al. Ultralow contact resistance between semimetal and monolayer semiconductors. Nature 593, 211–217 (2021).
Sebastian, A., Pendurthi, R., Choudhury, T. H., Redwing, J. M. & Das, S. Benchmarking monolayer MoS2 and WS2 field-effect transistors. Nat. Commun. 12, 693 (2021).
Zhu, J. et al. Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform. Nat. Nanotechnol. 18, 456–463 (2023).
Novoselov, K. S. et al. Electric field effect in atomically thin carbon films. Science 306, 666–669 (2004).
Son, J. et al. Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures. Nat. Commun. 9, 3988 (2018).
Lee, G.-H. et al. High-strength chemical-vapor–deposited graphene and grain boundaries. Science 340, 1073–1076 (2013).
Jin, S. et al. Colossal grain growth yields single-crystal metal foils by contact-free annealing. Science 362, 1021–1025 (2018).
Kim, H. et al. In-plane anisotropy of graphene by strong interlayer interactions with van der Waals epitaxially grown MoO3. Sci. Adv. 9, eadg6696 (2023).
Kresse, G. & Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169–11186 (1996).
Sholl, D. & Steckel, J. A. Density Functional Theory: A Practical Introduction (Wiley, 2011).
Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865–3868 (1996).
Blöchl, P. E. Projector augmented-wave method. Phys. Rev. B 50, 17953–17979 (1994).
Kresse, G. & Joubert, D. From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 59, 1758–1775 (1999).
Monkhorst, H. J. & Pack, J. D. Special points for Brillouin-zone integrations. Phys. Rev. B 13, 5188–5192 (1976).
Javaid, M., Drumm, D. W., Russo, S. P. & Greentree, A. D. A study of size-dependent properties of MoS2 monolayer nanoflakes using density-functional theory. Sci Rep. 7, 9775 (2017).
Kim, J.-Y., Choi, S. M., Seo, W.-S. & Cho, W.-S. Thermal and electronic properties of exfoliated metal chalcogenides. Bull. Korean Chem. Soc. 31, 3225–3227 (2010).
Shin, Y. et al. Graphene via contact architecture for vertical integration of vdW heterostructure devices. Small 18, 2200882 (2022).
